Optoelectronic device and method of making same

An optoelectronic device (10) includes a first substrate (12) having a first surface (14) and a second surface (16); an underlayer (18) located over the second surface (16); a first conductive layer (20) over the underlayer (18); an overlayer (22) over the first conductive layer (20); a semiconducto...

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Bibliographische Detailangaben
Hauptverfasser:	KABAGAMBE BENJAMIN, HUNG CHENG-HUNG, MCCAMY JAMES W, MA ZHIXUN, KORAM KWAKU K, NELIS GARY J
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	An optoelectronic device (10) includes a first substrate (12) having a first surface (14) and a second surface (16); an underlayer (18) located over the second surface (16); a first conductive layer (20) over the underlayer (18); an overlayer (22) over the first conductive layer (20); a semiconductor layer (24) over the first conductive layer (20); and a second conductive layer (26) over the semiconductor layer (24). The first conductive layer (20) includes a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and fluorine; and/or the overlayer (22) includes a buffer layer (42) including tin oxide and at least one material selected from the group consisting of zinc, indium, gallium, and magnesium. 种光电器件(10)包括：具有第表面(14)和第二表面(16)的第基材(12)；位于该第二表面(16)上的底层(18)；位于该底层(18)上的第导电层(20)；位于该第导电层(20)上的覆盖层(22)；位于该第导电层(20)上的半导体层(24)；和位于该半导体层(24)上的第二导电层(26)。该第导电层(20)包括导电氧化物和选自钨、钼、铌和氟的至少种掺杂剂；和/或该覆盖层(22)包括缓冲层(42)，该缓冲层(42)包括氧化锡和选自锌、铟、镓和镁的至少种材料。