Method for manufacturing bottom-gate TFT (Thin Film Transistor) substrate

The invention provides a method for manufacturing a bottom-gate TFT (Thin Film Transistor) substrate, which comprises the steps of forming a first etching barrier layer on a gate metal layer, and forming a second etching barrier layer on a source-drain metal layer; when via holes are formed respecti...

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1. Verfasser:	HE MINBO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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