Semiconductor Structure And Fabricating Method Thereof

A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of...

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Hauptverfasser:	LIU, KUOIO, HUANG, HSINIEH, CHEN, CHEN-SHIEN, WONG, JHENG-JIE, HUANG, WEI-LI, LIAO, DE-DUI MARVIN, HUANG, TSUNG-LUNG, SU, HSIANG-SHENG, KU, CHIN-YU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	LIU, KUOIO HUANG, HSINIEH CHEN, CHEN-SHIEN WONG, JHENG-JIE HUANG, WEI-LI LIAO, DE-DUI MARVIN HUANG, TSUNG-LUNG SU, HSIANG-SHENG KU, CHIN-YU
description	A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer. 本发明实施例涉及半导体结构及其制造方法。种制造半导体结构的方法，所述方法包含形成传导层于第绝缘层上；蚀刻所述传导层的部分，以暴露所述第绝缘层的部分；变形所述第绝缘层的所述部分的表面，以形成所述第绝缘层的粗糙表面；以及从所述第绝缘层的所述粗糙表面移除所述传导层的残留物。
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title	Semiconductor Structure And Fabricating Method Thereof
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