Industrial method for producing silicon-free hydrogen fluoride
The invention provides an industrial method for producing silicon-free hydrogen fluoride, which includes the following steps: (A) placing aluminum in a first reactor and increasing the temperature to 700-1050 DEG C, adding one or a mixture of more than one of potassium fluotitanate, potassium fluobo...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | ZHOU ZHI CHEN XUEMIN ZHONG SHENGXIAN ZENG QINGQUAN LI SHUIBING |
description | The invention provides an industrial method for producing silicon-free hydrogen fluoride, which includes the following steps: (A) placing aluminum in a first reactor and increasing the temperature to 700-1050 DEG C, adding one or a mixture of more than one of potassium fluotitanate, potassium fluoborate and potassium fluozirconate to the first reactor, stirring the components for 0.5-4 h, allowing the components to stand for 2-4 h and withdrawing a molten liquid on the upper layer to obtain potassium cryolite; (B) according to ratio, adding a certain amount of concentrated sulfuric acid in a second reactor, and adding the potassium cryolite to the second reactor, stirring the components for 0.5-3 h, and controlling reaction temperature to be 200-300 DEG C, allowing the components to stand for 3-4 h, and collecting escaped gas to obtain the silicon-free hydrogen fluoride. In the method, firstly the potassium cryolite is prepared through special steps and then is reacted wit the concentrated sulfuric acid to ob |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN107161952A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN107161952A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN107161952A3</originalsourceid><addsrcrecordid>eNrjZLDzzEspLS4pykzMUchNLcnIT1FIyy9SKCjKTylNzsxLVyjOzMlMzs_TTStKTVXIqEwpyk9PzVNIyynNL8pMSeVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYG5oZmhpamRo7GxKgBAJdlMRE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Industrial method for producing silicon-free hydrogen fluoride</title><source>esp@cenet</source><creator>ZHOU ZHI ; CHEN XUEMIN ; ZHONG SHENGXIAN ; ZENG QINGQUAN ; LI SHUIBING</creator><creatorcontrib>ZHOU ZHI ; CHEN XUEMIN ; ZHONG SHENGXIAN ; ZENG QINGQUAN ; LI SHUIBING</creatorcontrib><description>The invention provides an industrial method for producing silicon-free hydrogen fluoride, which includes the following steps: (A) placing aluminum in a first reactor and increasing the temperature to 700-1050 DEG C, adding one or a mixture of more than one of potassium fluotitanate, potassium fluoborate and potassium fluozirconate to the first reactor, stirring the components for 0.5-4 h, allowing the components to stand for 2-4 h and withdrawing a molten liquid on the upper layer to obtain potassium cryolite; (B) according to ratio, adding a certain amount of concentrated sulfuric acid in a second reactor, and adding the potassium cryolite to the second reactor, stirring the components for 0.5-3 h, and controlling reaction temperature to be 200-300 DEG C, allowing the components to stand for 3-4 h, and collecting escaped gas to obtain the silicon-free hydrogen fluoride. In the method, firstly the potassium cryolite is prepared through special steps and then is reacted wit the concentrated sulfuric acid to ob</description><language>chi ; eng</language><subject>CHEMISTRY ; COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS ; COMPOUNDS THEREOF ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170915&DB=EPODOC&CC=CN&NR=107161952A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170915&DB=EPODOC&CC=CN&NR=107161952A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHOU ZHI</creatorcontrib><creatorcontrib>CHEN XUEMIN</creatorcontrib><creatorcontrib>ZHONG SHENGXIAN</creatorcontrib><creatorcontrib>ZENG QINGQUAN</creatorcontrib><creatorcontrib>LI SHUIBING</creatorcontrib><title>Industrial method for producing silicon-free hydrogen fluoride</title><description>The invention provides an industrial method for producing silicon-free hydrogen fluoride, which includes the following steps: (A) placing aluminum in a first reactor and increasing the temperature to 700-1050 DEG C, adding one or a mixture of more than one of potassium fluotitanate, potassium fluoborate and potassium fluozirconate to the first reactor, stirring the components for 0.5-4 h, allowing the components to stand for 2-4 h and withdrawing a molten liquid on the upper layer to obtain potassium cryolite; (B) according to ratio, adding a certain amount of concentrated sulfuric acid in a second reactor, and adding the potassium cryolite to the second reactor, stirring the components for 0.5-3 h, and controlling reaction temperature to be 200-300 DEG C, allowing the components to stand for 3-4 h, and collecting escaped gas to obtain the silicon-free hydrogen fluoride. In the method, firstly the potassium cryolite is prepared through special steps and then is reacted wit the concentrated sulfuric acid to ob</description><subject>CHEMISTRY</subject><subject>COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS</subject><subject>COMPOUNDS THEREOF</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDzzEspLS4pykzMUchNLcnIT1FIyy9SKCjKTylNzsxLVyjOzMlMzs_TTStKTVXIqEwpyk9PzVNIyynNL8pMSeVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYG5oZmhpamRo7GxKgBAJdlMRE</recordid><startdate>20170915</startdate><enddate>20170915</enddate><creator>ZHOU ZHI</creator><creator>CHEN XUEMIN</creator><creator>ZHONG SHENGXIAN</creator><creator>ZENG QINGQUAN</creator><creator>LI SHUIBING</creator><scope>EVB</scope></search><sort><creationdate>20170915</creationdate><title>Industrial method for producing silicon-free hydrogen fluoride</title><author>ZHOU ZHI ; CHEN XUEMIN ; ZHONG SHENGXIAN ; ZENG QINGQUAN ; LI SHUIBING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN107161952A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>CHEMISTRY</topic><topic>COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS</topic><topic>COMPOUNDS THEREOF</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHOU ZHI</creatorcontrib><creatorcontrib>CHEN XUEMIN</creatorcontrib><creatorcontrib>ZHONG SHENGXIAN</creatorcontrib><creatorcontrib>ZENG QINGQUAN</creatorcontrib><creatorcontrib>LI SHUIBING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHOU ZHI</au><au>CHEN XUEMIN</au><au>ZHONG SHENGXIAN</au><au>ZENG QINGQUAN</au><au>LI SHUIBING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Industrial method for producing silicon-free hydrogen fluoride</title><date>2017-09-15</date><risdate>2017</risdate><abstract>The invention provides an industrial method for producing silicon-free hydrogen fluoride, which includes the following steps: (A) placing aluminum in a first reactor and increasing the temperature to 700-1050 DEG C, adding one or a mixture of more than one of potassium fluotitanate, potassium fluoborate and potassium fluozirconate to the first reactor, stirring the components for 0.5-4 h, allowing the components to stand for 2-4 h and withdrawing a molten liquid on the upper layer to obtain potassium cryolite; (B) according to ratio, adding a certain amount of concentrated sulfuric acid in a second reactor, and adding the potassium cryolite to the second reactor, stirring the components for 0.5-3 h, and controlling reaction temperature to be 200-300 DEG C, allowing the components to stand for 3-4 h, and collecting escaped gas to obtain the silicon-free hydrogen fluoride. In the method, firstly the potassium cryolite is prepared through special steps and then is reacted wit the concentrated sulfuric acid to ob</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | chi ; eng |
recordid | cdi_epo_espacenet_CN107161952A |
source | esp@cenet |
subjects | CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS COMPOUNDS THEREOF INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS |
title | Industrial method for producing silicon-free hydrogen fluoride |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T15%3A26%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHOU%20ZHI&rft.date=2017-09-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN107161952A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |