SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The invention relates to a semiconductor device and a method of manufacturing the same. Conventional surface roughening plating technology cannot always improve the adhesion between a leadframe and a plating film and it depends on the material used for surface roughening plating. Conventional surfac...
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| creator | OKAWA KEIICHI MOTOWAKI SIGEHISA TAKAHASHI YASUSHI NAKAJO TAKUYA TAMURA MASAKI KAJIWARA RYOICHI HOZOUJI HIROSHI |
| description | The invention relates to a semiconductor device and a method of manufacturing the same. Conventional surface roughening plating technology cannot always improve the adhesion between a leadframe and a plating film and it depends on the material used for surface roughening plating. Conventional surface roughening technology by etching can only be used for leadframes made of limited materials. Improved adhesion cannot therefore be achieved between a metal member such as leadframe and a sealing resin. A manufacturing method of a semiconductor device according to one embodiment is to carry out resin sealing using a metal member such as leadframe which has been subjected to alloying treatment of a base material and Zn plated on the surface thereof.
本公开涉及半导体器件及其制造方法。传统表面粗糙化镀敷技术不能总是改进引线框架与镀敷膜之间的粘合，其依赖于用于表面粗糙化镀敷的材料。通过刻蚀进行的传统表面粗糙化技术仅可以用于有限的材料制成的引线框架。因此，无法在金属构件例如引线框架与密封树脂之间实现改进的粘合。根据实施例的半导体器件制造方法是：使用已经经历基材和其表面上镀敷的Zn的合金化处理的金属构件例如引线框架来执行树脂密封。 |
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本公开涉及半导体器件及其制造方法。传统表面粗糙化镀敷技术不能总是改进引线框架与镀敷膜之间的粘合，其依赖于用于表面粗糙化镀敷的材料。通过刻蚀进行的传统表面粗糙化技术仅可以用于有限的材料制成的引线框架。因此，无法在金属构件例如引线框架与密封树脂之间实现改进的粘合。根据实施例的半导体器件制造方法是：使用已经经历基材和其表面上镀敷的Zn的合金化处理的金属构件例如引线框架来执行树脂密封。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170905&DB=EPODOC&CC=CN&NR=107134415A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170905&DB=EPODOC&CC=CN&NR=107134415A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OKAWA KEIICHI</creatorcontrib><creatorcontrib>MOTOWAKI SIGEHISA</creatorcontrib><creatorcontrib>TAKAHASHI YASUSHI</creatorcontrib><creatorcontrib>NAKAJO TAKUYA</creatorcontrib><creatorcontrib>TAMURA MASAKI</creatorcontrib><creatorcontrib>KAJIWARA RYOICHI</creatorcontrib><creatorcontrib>HOZOUJI HIROSHI</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><description>The invention relates to a semiconductor device and a method of manufacturing the same. Conventional surface roughening plating technology cannot always improve the adhesion between a leadframe and a plating film and it depends on the material used for surface roughening plating. Conventional surface roughening technology by etching can only be used for leadframes made of limited materials. Improved adhesion cannot therefore be achieved between a metal member such as leadframe and a sealing resin. A manufacturing method of a semiconductor device according to one embodiment is to carry out resin sealing using a metal member such as leadframe which has been subjected to alloying treatment of a base material and Zn plated on the surface thereof.
本公开涉及半导体器件及其制造方法。传统表面粗糙化镀敷技术不能总是改进引线框架与镀敷膜之间的粘合，其依赖于用于表面粗糙化镀敷的材料。通过刻蚀进行的传统表面粗糙化技术仅可以用于有限的材料制成的引线框架。因此，无法在金属构件例如引线框架与密封树脂之间实现改进的粘合。根据实施例的半导体器件制造方法是：使用已经经历基材和其表面上镀敷的Zn的合金化处理的金属构件例如引线框架来执行树脂密封。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBuaGxiYmhqaOxsSoAQB82SiH</recordid><startdate>20170905</startdate><enddate>20170905</enddate><creator>OKAWA KEIICHI</creator><creator>MOTOWAKI SIGEHISA</creator><creator>TAKAHASHI YASUSHI</creator><creator>NAKAJO TAKUYA</creator><creator>TAMURA MASAKI</creator><creator>KAJIWARA RYOICHI</creator><creator>HOZOUJI HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>20170905</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><author>OKAWA KEIICHI ; MOTOWAKI SIGEHISA ; TAKAHASHI YASUSHI ; NAKAJO TAKUYA ; TAMURA MASAKI ; KAJIWARA RYOICHI ; HOZOUJI HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN107134415A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OKAWA KEIICHI</creatorcontrib><creatorcontrib>MOTOWAKI SIGEHISA</creatorcontrib><creatorcontrib>TAKAHASHI YASUSHI</creatorcontrib><creatorcontrib>NAKAJO TAKUYA</creatorcontrib><creatorcontrib>TAMURA MASAKI</creatorcontrib><creatorcontrib>KAJIWARA RYOICHI</creatorcontrib><creatorcontrib>HOZOUJI HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OKAWA KEIICHI</au><au>MOTOWAKI SIGEHISA</au><au>TAKAHASHI YASUSHI</au><au>NAKAJO TAKUYA</au><au>TAMURA MASAKI</au><au>KAJIWARA RYOICHI</au><au>HOZOUJI HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><date>2017-09-05</date><risdate>2017</risdate><abstract>The invention relates to a semiconductor device and a method of manufacturing the same. Conventional surface roughening plating technology cannot always improve the adhesion between a leadframe and a plating film and it depends on the material used for surface roughening plating. Conventional surface roughening technology by etching can only be used for leadframes made of limited materials. Improved adhesion cannot therefore be achieved between a metal member such as leadframe and a sealing resin. A manufacturing method of a semiconductor device according to one embodiment is to carry out resin sealing using a metal member such as leadframe which has been subjected to alloying treatment of a base material and Zn plated on the surface thereof.
本公开涉及半导体器件及其制造方法。传统表面粗糙化镀敷技术不能总是改进引线框架与镀敷膜之间的粘合，其依赖于用于表面粗糙化镀敷的材料。通过刻蚀进行的传统表面粗糙化技术仅可以用于有限的材料制成的引线框架。因此，无法在金属构件例如引线框架与密封树脂之间实现改进的粘合。根据实施例的半导体器件制造方法是：使用已经经历基材和其表面上镀敷的Zn的合金化处理的金属构件例如引线框架来执行树脂密封。</abstract><oa>free_for_read</oa></addata></record> |
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| title | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
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