Metal gate and field board structure of radio frequency VDMOS transistor and manufacturing method thereof

The invention discloses a metal gate and field board structure of a radio frequency VDMOS transistor and a manufacturing method thereof. Wet etching is adopted to form a trapezoidal oxide layer in the middle of the surface of an epitaxial layer of a silicon substrate; a conventional process is adopt...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHENG GUOXING, LIU HONGJUN, ZHAO YANGYANG, YING XIANWEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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