Apparatus and method for producing lateral HEMT
An apparatus (100, 200, 300, 400) including a lateral HEMT is provided. The lateral HEMT comprises at least one buffer layer (101, 201, 301, 401) on which another semiconductor layer (102, 202, 302, 402) is arranged. A first electrode (103, 203, 303, 403), a grid electrode (104, 204, 304, 404) and a...
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| creator | JAUSS SIMON ALEXANDER SCHWAIGER STEPHAN |
| description | An apparatus (100, 200, 300, 400) including a lateral HEMT is provided. The lateral HEMT comprises at least one buffer layer (101, 201, 301, 401) on which another semiconductor layer (102, 202, 302, 402) is arranged. A first electrode (103, 203, 303, 403), a grid electrode (104, 204, 304, 404) and a second electrode (105, 205, 305, 140) are arranged on the second semiconductor layer (102, 202, 302, 402). The apparatus is characterized in that a first field plate (109, 209, 309, 409) is arranged below the buffer layer (101, 201, 301, 401), and the first field plate (109, 209, 309, 409) is at least partially abutted against the buffer layer (101, 201, 301, 401).
本发明提出种包括横向HEMT的装置(100、200、300、400)，其中，所述横向HEMT包括至少个缓冲层(101、201、301、401)，在该缓冲层上布置另半导体层(102、202、302、402)，其中，在所述另半导体层(102、202、302、402)上布置第电极(103、203、303、403)、栅极(104、204、304、404)和第二电极(105、205、305、405)，其特征在于，在所述缓冲层(101、201、301、401)下方布置第场板(109、209、309、409)，其中，所述第场板(109、209、309、409)至少部分地邻接到所述缓冲层(101、201、301、401)上。 |
| format | Patent |
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本发明提出种包括横向HEMT的装置(100、200、300、400)，其中，所述横向HEMT包括至少个缓冲层(101、201、301、401)，在该缓冲层上布置另半导体层(102、202、302、402)，其中，在所述另半导体层(102、202、302、402)上布置第电极(103、203、303、403)、栅极(104、204、304、404)和第二电极(105、205、305、405)，其特征在于，在所述缓冲层(101、201、301、401)下方布置第场板(109、209、309、409)，其中，所述第场板(109、209、309、409)至少部分地邻接到所述缓冲层(101、201、301、401)上。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170728&DB=EPODOC&CC=CN&NR=106992210A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170728&DB=EPODOC&CC=CN&NR=106992210A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JAUSS SIMON ALEXANDER</creatorcontrib><creatorcontrib>SCHWAIGER STEPHAN</creatorcontrib><title>Apparatus and method for producing lateral HEMT</title><description>An apparatus (100, 200, 300, 400) including a lateral HEMT is provided. The lateral HEMT comprises at least one buffer layer (101, 201, 301, 401) on which another semiconductor layer (102, 202, 302, 402) is arranged. A first electrode (103, 203, 303, 403), a grid electrode (104, 204, 304, 404) and a second electrode (105, 205, 305, 140) are arranged on the second semiconductor layer (102, 202, 302, 402). The apparatus is characterized in that a first field plate (109, 209, 309, 409) is arranged below the buffer layer (101, 201, 301, 401), and the first field plate (109, 209, 309, 409) is at least partially abutted against the buffer layer (101, 201, 301, 401).
本发明提出种包括横向HEMT的装置(100、200、300、400)，其中，所述横向HEMT包括至少个缓冲层(101、201、301、401)，在该缓冲层上布置另半导体层(102、202、302、402)，其中，在所述另半导体层(102、202、302、402)上布置第电极(103、203、303、403)、栅极(104、204、304、404)和第二电极(105、205、305、405)，其特征在于，在所述缓冲层(101、201、301、401)下方布置第场板(109、209、309、409)，其中，所述第场板(109、209、309、409)至少部分地邻接到所述缓冲层(101、201、301、401)上。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB3LChILEosKS1WSMxLUchNLcnIT1FIyy9SKCjKTylNzsxLV8hJLEktSsxR8HD1DeFhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYGZpaWRkaGBo7GxKgBAPtmKlw</recordid><startdate>20170728</startdate><enddate>20170728</enddate><creator>JAUSS SIMON ALEXANDER</creator><creator>SCHWAIGER STEPHAN</creator><scope>EVB</scope></search><sort><creationdate>20170728</creationdate><title>Apparatus and method for producing lateral HEMT</title><author>JAUSS SIMON ALEXANDER ; SCHWAIGER STEPHAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106992210A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JAUSS SIMON ALEXANDER</creatorcontrib><creatorcontrib>SCHWAIGER STEPHAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JAUSS SIMON ALEXANDER</au><au>SCHWAIGER STEPHAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Apparatus and method for producing lateral HEMT</title><date>2017-07-28</date><risdate>2017</risdate><abstract>An apparatus (100, 200, 300, 400) including a lateral HEMT is provided. The lateral HEMT comprises at least one buffer layer (101, 201, 301, 401) on which another semiconductor layer (102, 202, 302, 402) is arranged. A first electrode (103, 203, 303, 403), a grid electrode (104, 204, 304, 404) and a second electrode (105, 205, 305, 140) are arranged on the second semiconductor layer (102, 202, 302, 402). The apparatus is characterized in that a first field plate (109, 209, 309, 409) is arranged below the buffer layer (101, 201, 301, 401), and the first field plate (109, 209, 309, 409) is at least partially abutted against the buffer layer (101, 201, 301, 401).
本发明提出种包括横向HEMT的装置(100、200、300、400)，其中，所述横向HEMT包括至少个缓冲层(101、201、301、401)，在该缓冲层上布置另半导体层(102、202、302、402)，其中，在所述另半导体层(102、202、302、402)上布置第电极(103、203、303、403)、栅极(104、204、304、404)和第二电极(105、205、305、405)，其特征在于，在所述缓冲层(101、201、301、401)下方布置第场板(109、209、309、409)，其中，所述第场板(109、209、309、409)至少部分地邻接到所述缓冲层(101、201、301、401)上。</abstract><oa>free_for_read</oa></addata></record> |
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| title | Apparatus and method for producing lateral HEMT |
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