High-k-last manufacturing process for embedded memory with metal-oxide-nitride-oxide-silicon (MONOS) memory cells

An integrated circuit (IC) using high-K metal gate (HKMG) technology with an embedded metal-oxide-nitride-oxide-silicon (MONOS) memory cell is provided. A logic device is arranged on a semiconductor substrate and comprises a logic gate. A memory cell is arranged on the semiconductor substrate and co...

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Bibliographische Detailangaben

Hauptverfasser:	WEI CHENG WU, IING CHEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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