TFT substrate vapor deposition method

TFT substrate vapor deposition method

The invention provides a TFT substrate vapor deposition method. The TFT substrate vapor deposition method comprises depositing a first isolation material on a glass substrate, etching the first isolation material selectively, and forming several first openings which are arranged in an array in the f...

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Hauptverfasser: LIU XIAOJIA, XI WANGFENG, WENG JIAFENG, DENG LIANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LIU XIAOJIA
XI WANGFENG
WENG JIAFENG
DENG LIANG
description The invention provides a TFT substrate vapor deposition method. The TFT substrate vapor deposition method comprises depositing a first isolation material on a glass substrate, etching the first isolation material selectively, and forming several first openings which are arranged in an array in the first isolation material with the first openings being exposed in the surface of the glass substrate; arranging a metal line on the glass substrate with the metal line at least covering the bottom wall and the sidewall of each first opening; filling each first opening with a luminescent material; depositing a second isolation material on the TFT substrate, etching the second isolation material selectively, forming several second openings which are arranged in an array in the second isolation material with the second openings being exposed in the surface of the TFT substrate; arranging the glass substrate and the TFT substrate in an opposite manner, aligning the first openings to the second openings, providing voltag
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title TFT substrate vapor deposition method
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