Manufacturing method of nonvolatile memory

The present invention discloses a manufacturing method of a nonvolatile memory. The manufacturing method of the nonvolatile memory comprises the following steps of forming a unipolarity resistive storage unit and a diode unit on a substrate; connecting the diode unit and the unipolarity resistive st...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LI DAIYING, ZENG JUNYUAN, CAI ZONGLIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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