Manufacturing method of nonvolatile memory
The present invention discloses a manufacturing method of a nonvolatile memory. The manufacturing method of the nonvolatile memory comprises the following steps of forming a unipolarity resistive storage unit and a diode unit on a substrate; connecting the diode unit and the unipolarity resistive st...
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| creator | LI DAIYING ZENG JUNYUAN CAI ZONGLIN |
| description | The present invention discloses a manufacturing method of a nonvolatile memory. The manufacturing method of the nonvolatile memory comprises the following steps of forming a unipolarity resistive storage unit and a diode unit on a substrate; connecting the diode unit and the unipolarity resistive storage unit electrically. The formation of the diode unit comprises the following steps of forming a first electrode on the substrate; utilizing an AC magnetron sputtering method to form an indium zinc oxide layer and a cobaltous oxide layer on the first electrode orderly, and forming a second electrode on the cobaltous oxide layer. The manufacturing method of the present invention not only has a good rectification effect, also can bear more than 100 switching operations between the high resistance and the low resistance repeatedly, and keeps the high reading discrimination degree between the high resistance and the low resistance.
本发明公开了种非易失性存储器的制造方法，其步骤如下：于基底上形成单极性电阻式存储单元以及二极管单元；二极管单元与单极性电阻式存储单元电性连接。所述二极管单元的形成步骤如下 |
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本发明公开了种非易失性存储器的制造方法，其步骤如下：于基底上形成单极性电阻式存储单元以及二极管单元；二极管单元与单极性电阻式存储单元电性连接。所述二极管单元的形成步骤如下</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170606&DB=EPODOC&CC=CN&NR=106803486A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170606&DB=EPODOC&CC=CN&NR=106803486A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI DAIYING</creatorcontrib><creatorcontrib>ZENG JUNYUAN</creatorcontrib><creatorcontrib>CAI ZONGLIN</creatorcontrib><title>Manufacturing method of nonvolatile memory</title><description>The present invention discloses a manufacturing method of a nonvolatile memory. The manufacturing method of the nonvolatile memory comprises the following steps of forming a unipolarity resistive storage unit and a diode unit on a substrate; connecting the diode unit and the unipolarity resistive storage unit electrically. The formation of the diode unit comprises the following steps of forming a first electrode on the substrate; utilizing an AC magnetron sputtering method to form an indium zinc oxide layer and a cobaltous oxide layer on the first electrode orderly, and forming a second electrode on the cobaltous oxide layer. The manufacturing method of the present invention not only has a good rectification effect, also can bear more than 100 switching operations between the high resistance and the low resistance repeatedly, and keeps the high reading discrimination degree between the high resistance and the low resistance.
本发明公开了种非易失性存储器的制造方法，其步骤如下：于基底上形成单极性电阻式存储单元以及二极管单元；二极管单元与单极性电阻式存储单元电性连接。所述二极管单元的形成步骤如下</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDyTcwrTUtMLiktysxLV8hNLcnIT1HIT1PIy88ry89JLMnMSQWK5uYXVfIwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0MDMwsDYxMLM0djYtQAAGQEKYc</recordid><startdate>20170606</startdate><enddate>20170606</enddate><creator>LI DAIYING</creator><creator>ZENG JUNYUAN</creator><creator>CAI ZONGLIN</creator><scope>EVB</scope></search><sort><creationdate>20170606</creationdate><title>Manufacturing method of nonvolatile memory</title><author>LI DAIYING ; ZENG JUNYUAN ; CAI ZONGLIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106803486A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LI DAIYING</creatorcontrib><creatorcontrib>ZENG JUNYUAN</creatorcontrib><creatorcontrib>CAI ZONGLIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI DAIYING</au><au>ZENG JUNYUAN</au><au>CAI ZONGLIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Manufacturing method of nonvolatile memory</title><date>2017-06-06</date><risdate>2017</risdate><abstract>The present invention discloses a manufacturing method of a nonvolatile memory. The manufacturing method of the nonvolatile memory comprises the following steps of forming a unipolarity resistive storage unit and a diode unit on a substrate; connecting the diode unit and the unipolarity resistive storage unit electrically. The formation of the diode unit comprises the following steps of forming a first electrode on the substrate; utilizing an AC magnetron sputtering method to form an indium zinc oxide layer and a cobaltous oxide layer on the first electrode orderly, and forming a second electrode on the cobaltous oxide layer. The manufacturing method of the present invention not only has a good rectification effect, also can bear more than 100 switching operations between the high resistance and the low resistance repeatedly, and keeps the high reading discrimination degree between the high resistance and the low resistance.
本发明公开了种非易失性存储器的制造方法，其步骤如下：于基底上形成单极性电阻式存储单元以及二极管单元；二极管单元与单极性电阻式存储单元电性连接。所述二极管单元的形成步骤如下</abstract><oa>free_for_read</oa></addata></record> |
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| title | Manufacturing method of nonvolatile memory |
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