Blue light LED epitaxial structure grown on GaAs substrate

The invention relates to a blue light LED epitaxial structure grown on a GaAs substrate, relating to the technical field of light-emitting diodes. The structure of the blue light LED epitaxial structure comprises a substrate, a buffer layer, a U type GaN layer, an N type GaN layer, an active region, an electronic barrier layer and a P type GaN layer from the bottom to top. The structure is characterized in that the substrate is a GaAs substrate, the buffer layer comprises a ZnO buffer layer and a metal nitride buffer layer growth on the ZnO buffer layer, and the U type GaN layer comprises a U1 type GaN layer, a Prague reflection layer, and a U2 type GaN layer from the bottom to top. Compared with the prior art, the blue light LED epitaxial structure has the advantages that the GaAs substrate is employed, the quality is high, the dissociation is easy, the cost is relatively low, a vertical structure is easily made, the P type doping is easy, and the light emitting efficiency can be improved. 种在GaAs衬底上生长的蓝光LED外