Process for producing cathode sputtering target and the similar targets
The targets for cathodic sputtering according to this invention are formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content are known. In order to provide the improvement of hig...
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| creator | K.-H. GOY D. FRANCIS J. SCHIELKE |
| description | The targets for cathodic sputtering according to this invention are formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content are known. In order to provide the improvement of high stability and, simultaneously, high sputtering rate, it is proposed according to the invention that the target have a crystalline phase which is formed as a solid solution of indium oxide and tin oxide with a minimum of 90% by weight, preferably a minimum of 97%, of the solid solution, and which has an average grain size ranging from 2 mu m to 20 mu m. In order to make available a simple and cost-efficient method for producing a target consisting of a starting powder of indium oxide/tin oxide, which allows for a precise setting of the oxygen content and a homogeneous chemical composition throughout the entire target volume, it is proposed that a starting powder be used that is produced by oxidizing finely distributed indium tin metal. |
| format | Patent |
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SCHIELKE</creatorcontrib><description>The targets for cathodic sputtering according to this invention are formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content are known. In order to provide the improvement of high stability and, simultaneously, high sputtering rate, it is proposed according to the invention that the target have a crystalline phase which is formed as a solid solution of indium oxide and tin oxide with a minimum of 90% by weight, preferably a minimum of 97%, of the solid solution, and which has an average grain size ranging from 2 mu m to 20 mu m. In order to make available a simple and cost-efficient method for producing a target consisting of a starting powder of indium oxide/tin oxide, which allows for a precise setting of the oxygen content and a homogeneous chemical composition throughout the entire target volume, it is proposed that a starting powder be used that is produced by oxidizing finely distributed indium tin metal.</description><edition>7</edition><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CABLES ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; CONCRETE ; CONDUCTORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; INSULATORS ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010606&DB=EPODOC&CC=CN&NR=1066782C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010606&DB=EPODOC&CC=CN&NR=1066782C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>K.-H. 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In order to make available a simple and cost-efficient method for producing a target consisting of a starting powder of indium oxide/tin oxide, which allows for a precise setting of the oxygen content and a homogeneous chemical composition throughout the entire target volume, it is proposed that a starting powder be used that is produced by oxidizing finely distributed indium tin metal.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>CONCRETE</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>INSULATORS</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAPKMpPTi0uVkjLL1IoKMpPKU3OzEtXSE4sychPSVUoLigtKUktAgmVJBalp5YoJOalKJRkAGUyczNzEougwsU8DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTe2c_QwMzM3MLI2dmYCCUAOjM0Fg</recordid><startdate>20010606</startdate><enddate>20010606</enddate><creator>K.-H. 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SCHIELKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1066782CC3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2001</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>CONCRETE</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>INSULATORS</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>K.-H. GOY</creatorcontrib><creatorcontrib>D. FRANCIS</creatorcontrib><creatorcontrib>J. SCHIELKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>K.-H. GOY</au><au>D. FRANCIS</au><au>J. SCHIELKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process for producing cathode sputtering target and the similar targets</title><date>2001-06-06</date><risdate>2001</risdate><abstract>The targets for cathodic sputtering according to this invention are formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content are known. In order to provide the improvement of high stability and, simultaneously, high sputtering rate, it is proposed according to the invention that the target have a crystalline phase which is formed as a solid solution of indium oxide and tin oxide with a minimum of 90% by weight, preferably a minimum of 97%, of the solid solution, and which has an average grain size ranging from 2 mu m to 20 mu m. In order to make available a simple and cost-efficient method for producing a target consisting of a starting powder of indium oxide/tin oxide, which allows for a precise setting of the oxygen content and a homogeneous chemical composition throughout the entire target volume, it is proposed that a starting powder be used that is produced by oxidizing finely distributed indium tin metal.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONCRETE CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS LIME, MAGNESIA METALLURGY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
| title | Process for producing cathode sputtering target and the similar targets |
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