Parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology

Parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology

The invention discloses a parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology. The rectangular patch antenna is printed at the upper surface center of a dielectric substrate. The antenna is fed through a feeding microstrip line in an insertion feeding manner. The f...

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Hauptverfasser: JIN HUAYAN, YANG WANCHEN, FAN CHONG, CHE WENQUAN, YANG YAYANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRICITY
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creator JIN HUAYAN
YANG WANCHEN
FAN CHONG
CHE WENQUAN
YANG YAYANG
description The invention discloses a parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology. The rectangular patch antenna is printed at the upper surface center of a dielectric substrate. The antenna is fed through a feeding microstrip line in an insertion feeding manner. The feeding microstrip line is perpendicular to the radiation edge of the patch antenna. The other end of the feeding microstrip line is connected with a GSG structure; the GSG structure is located at the edge of the dielectric substrate. The parasitic metal strip is parallel with the non-radiation edge of the rectangular patch antenna and is divided symmetrically by the straight line where the feeding microstrip line is located. The other radiation edge outer side of the rectangular patch antenna is provided with a parasitic patch, one end of which is grounded through a grounding metal column. The bottom part of the dielectric substrate is provided with a metal floor plate. According to the invention, the gain of the a
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The rectangular patch antenna is printed at the upper surface center of a dielectric substrate. The antenna is fed through a feeding microstrip line in an insertion feeding manner. The feeding microstrip line is perpendicular to the radiation edge of the patch antenna. The other end of the feeding microstrip line is connected with a GSG structure; the GSG structure is located at the edge of the dielectric substrate. The parasitic metal strip is parallel with the non-radiation edge of the rectangular patch antenna and is divided symmetrically by the straight line where the feeding microstrip line is located. The other radiation edge outer side of the rectangular patch antenna is provided with a parasitic patch, one end of which is grounded through a grounding metal column. The bottom part of the dielectric substrate is provided with a metal floor plate. 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subjects ANTENNAS, i.e. RADIO AERIALS
BASIC ELECTRIC ELEMENTS
ELECTRICITY
title Parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology
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