Method for monitoring implantation dose and implantation uniformity of ions

Method for monitoring implantation dose and implantation uniformity of ions

The invention provides a method for monitoring the implantation dose and implantation uniformity of ions. The characteristic that ion implantation will cause crystal defect is used cleverly. Crystal defect caused by ion implantation is measured through mu-PCD, and crystal defect distribution and cry...

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1. Verfasser: CAO WENKE
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description The invention provides a method for monitoring the implantation dose and implantation uniformity of ions. The characteristic that ion implantation will cause crystal defect is used cleverly. Crystal defect caused by ion implantation is measured through mu-PCD, and crystal defect distribution and crystal defect peak PV are obtained. The influence of waiting time x on mu-PCD measurement is considered. The actual equivalent implantation dose M is calculated according to M=PV-Kln(x). Whether the actual ion implantation dose meets the requirements is monitored by comparing the actual equivalent implantation dose M with the standard equivalent implantation dose M. The implantation uniformity of ions is monitored by checking the crystal defect distribution obtained through mu-PCD measurement. The method is simple and easy to implement. Through the method, the actual implantation dose and implantation uniformity of low-dose ion implantation by ion implantation equipment can be monitored effectively, and a channel dop
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for monitoring implantation dose and implantation uniformity of ions
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