Flash memory and method for improving reliability of flash memory

The invention provides a flash memory and a method for improving the reliability of the flash memory. The method for improving the reliability of the flash memory comprises the steps of during a writing period, applying a first turn-on voltage, a first voltage and a second voltage to a gate structur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XU ZENGJU, ZHANG SHANGWEN, CHEN JIANLONG, YAN DINGGUO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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