Light emitting diode epitaxial structure and growth method thereof

The invention discloses a light emitting diode epitaxial structure. An N-type layer is grown on a surface of a substrate, a V-type defect pit is formed on a surface of the N-type layer, an active layer is grown on the N-type layer on which the V-type defect pit is formed, an opening form and opening depth of the V-type defect pit are kept on the active layer, a P-type layer is grown on the active layer, and the V-type defect pit is filled and levelled up. The invention further discloses a growth method of the light emitting diode epitaxial structure. The light emitting diode epitaxial structure is advantaged in that injection efficiency of an electronic and hole-direction active region can be enhanced, uniform distribution of the electronic and hole-direction active region is realized, internal quantum efficiency of the active region can be further enhanced, and light emitting efficiency is improved. 本发明公开种发光二极管的外延结构，在衬底表面生长N型层，N型层表面形成V型缺陷坑，在形成V型缺陷坑的N型层上生长有源层，并在有源层上保持V型缺陷坑的开口形态和开口深度，在有源层上生长P型层并将V型缺陷坑填平。本发明还公开