Method of preparing transition metal dichalcogenide (TMD)
The invention provides a method of preparing transition metal dichalcogenides (TMDs). The TMDs is produced in such a process environment that substrate temperature is 150-500 DEG C and pressure is 25-760 torr. In the method, the chalcogens are obtained in a manner of heating a solid chalcogen source...
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| creator | MAI DINA QUE YULUN CHEN YUZE |
| description | The invention provides a method of preparing transition metal dichalcogenides (TMDs). The TMDs is produced in such a process environment that substrate temperature is 150-500 DEG C and pressure is 25-760 torr. In the method, the chalcogens are obtained in a manner of heating a solid chalcogen source and ionizing the solid chalcogen source to form chalcogen plasma, so that the method is free of using hydrogen sulfide gas, which is extremely poisonous, for producing the TMDs in the prior art.
本发明提供种制备过渡金属硫族化物的方法，其可于150至500度的基板温度以及25至760托耳的制程环境下生产过渡金属硫族化物。且本发明采用的硫族元素来源是采用加热硫族固体源并对其离子化的方式以取得硫族元素等离子体，所以在本发明中可避免去使用习知制备过渡金属硫族化物技术中的剧毒硫化氢气体。 |
| format | Patent |
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本发明提供种制备过渡金属硫族化物的方法，其可于150至500度的基板温度以及25至760托耳的制程环境下生产过渡金属硫族化物。且本发明采用的硫族元素来源是采用加热硫族固体源并对其离子化的方式以取得硫族元素等离子体，所以在本发明中可避免去使用习知制备过渡金属硫族化物技术中的剧毒硫化氢气体。</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170405&DB=EPODOC&CC=CN&NR=106555167A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170405&DB=EPODOC&CC=CN&NR=106555167A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAI DINA</creatorcontrib><creatorcontrib>QUE YULUN</creatorcontrib><creatorcontrib>CHEN YUZE</creatorcontrib><title>Method of preparing transition metal dichalcogenide (TMD)</title><description>The invention provides a method of preparing transition metal dichalcogenides (TMDs). The TMDs is produced in such a process environment that substrate temperature is 150-500 DEG C and pressure is 25-760 torr. In the method, the chalcogens are obtained in a manner of heating a solid chalcogen source and ionizing the solid chalcogen source to form chalcogen plasma, so that the method is free of using hydrogen sulfide gas, which is extremely poisonous, for producing the TMDs in the prior art.
本发明提供种制备过渡金属硫族化物的方法，其可于150至500度的基板温度以及25至760托耳的制程环境下生产过渡金属硫族化物。且本发明采用的硫族元素来源是采用加热硫族固体源并对其离子化的方式以取得硫族元素等离子体，所以在本发明中可避免去使用习知制备过渡金属硫族化物技术中的剧毒硫化氢气体。</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD0TS3JyE9RyE9TKChKLUgsysxLVygpSswrzizJzM9TyE0tScxRSMlMzkjMSc5PT83LTElV0AjxddHkYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GBmampqaGZuaOxsSoAQARDi4d</recordid><startdate>20170405</startdate><enddate>20170405</enddate><creator>MAI DINA</creator><creator>QUE YULUN</creator><creator>CHEN YUZE</creator><scope>EVB</scope></search><sort><creationdate>20170405</creationdate><title>Method of preparing transition metal dichalcogenide (TMD)</title><author>MAI DINA ; QUE YULUN ; CHEN YUZE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106555167A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MAI DINA</creatorcontrib><creatorcontrib>QUE YULUN</creatorcontrib><creatorcontrib>CHEN YUZE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAI DINA</au><au>QUE YULUN</au><au>CHEN YUZE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of preparing transition metal dichalcogenide (TMD)</title><date>2017-04-05</date><risdate>2017</risdate><abstract>The invention provides a method of preparing transition metal dichalcogenides (TMDs). The TMDs is produced in such a process environment that substrate temperature is 150-500 DEG C and pressure is 25-760 torr. In the method, the chalcogens are obtained in a manner of heating a solid chalcogen source and ionizing the solid chalcogen source to form chalcogen plasma, so that the method is free of using hydrogen sulfide gas, which is extremely poisonous, for producing the TMDs in the prior art.
本发明提供种制备过渡金属硫族化物的方法，其可于150至500度的基板温度以及25至760托耳的制程环境下生产过渡金属硫族化物。且本发明采用的硫族元素来源是采用加热硫族固体源并对其离子化的方式以取得硫族元素等离子体，所以在本发明中可避免去使用习知制备过渡金属硫族化物技术中的剧毒硫化氢气体。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method of preparing transition metal dichalcogenide (TMD) |
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