LED epitaxial structure with high hole injection efficiency
The invention discloses an LED epitaxial structure with high hole injection efficiency, and relates to the technical field of light emitting diode epitaxy. The LED epitaxial structure sequentially comprises a substrate, a GaN buffer layer, a non-doped GaN layer, an N-type GaN layer, a multiple-quant...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ZHENG JIANQIN TIAN YU LAI ZHIHAO LIN ZHENGZHI WU ZHENLONG ZENG QIYAO |
| description | The invention discloses an LED epitaxial structure with high hole injection efficiency, and relates to the technical field of light emitting diode epitaxy. The LED epitaxial structure sequentially comprises a substrate, a GaN buffer layer, a non-doped GaN layer, an N-type GaN layer, a multiple-quantum well, an electron blocking layer, a P-type GaN layer and a P-type contact layer from bottom to top, wherein the multiple-quantum well comprises an InGaN layer and a GaN layer, the structure of the LED epitaxial structure is characterized in that the electron blocking layer sequentially comprises a p-type AlGaN layer, an AlN layer and a p-type InGaN layer from bottom to top, x is more than 0 but less than or equal to 0.3, y is more than 0 but less than or equal to 0.2, the electronic blocking layer comprises 8-12 growth periods, the growth pressure is 100-200Torr, and the electronic blocking layer is grown in a nitrogen environment. The electron blocking layer comprises the p-type AlGaN layer, the |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN106486573A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN106486573A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN106486573A3</originalsourceid><addsrcrecordid>eNrjZLD2cXVRSC3ILEmsyEzMUSguKSpNLiktSlUozyzJUMjITAcS-TmpCpl5WanJJZn5eQqpaWmZyZmpecmVPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7Uk3tnP0MDMxMLM1NzY0ZgYNQCjpy91</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LED epitaxial structure with high hole injection efficiency</title><source>esp@cenet</source><creator>ZHENG JIANQIN ; TIAN YU ; LAI ZHIHAO ; LIN ZHENGZHI ; WU ZHENLONG ; ZENG QIYAO</creator><creatorcontrib>ZHENG JIANQIN ; TIAN YU ; LAI ZHIHAO ; LIN ZHENGZHI ; WU ZHENLONG ; ZENG QIYAO</creatorcontrib><description>The invention discloses an LED epitaxial structure with high hole injection efficiency, and relates to the technical field of light emitting diode epitaxy. The LED epitaxial structure sequentially comprises a substrate, a GaN buffer layer, a non-doped GaN layer, an N-type GaN layer, a multiple-quantum well, an electron blocking layer, a P-type GaN layer and a P-type contact layer from bottom to top, wherein the multiple-quantum well comprises an InGaN layer and a GaN layer, the structure of the LED epitaxial structure is characterized in that the electron blocking layer sequentially comprises a p-type AlGa<1-x>N layer, an AlN layer and a p-type InGa<1-y>N layer from bottom to top, x is more than 0 but less than or equal to 0.3, y is more than 0 but less than or equal to 0.2, the electronic blocking layer comprises 8-12 growth periods, the growth pressure is 100-200Torr, and the electronic blocking layer is grown in a nitrogen environment. The electron blocking layer comprises the p-type AlGa<1-x>N layer, the</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170308&DB=EPODOC&CC=CN&NR=106486573A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170308&DB=EPODOC&CC=CN&NR=106486573A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHENG JIANQIN</creatorcontrib><creatorcontrib>TIAN YU</creatorcontrib><creatorcontrib>LAI ZHIHAO</creatorcontrib><creatorcontrib>LIN ZHENGZHI</creatorcontrib><creatorcontrib>WU ZHENLONG</creatorcontrib><creatorcontrib>ZENG QIYAO</creatorcontrib><title>LED epitaxial structure with high hole injection efficiency</title><description>The invention discloses an LED epitaxial structure with high hole injection efficiency, and relates to the technical field of light emitting diode epitaxy. The LED epitaxial structure sequentially comprises a substrate, a GaN buffer layer, a non-doped GaN layer, an N-type GaN layer, a multiple-quantum well, an electron blocking layer, a P-type GaN layer and a P-type contact layer from bottom to top, wherein the multiple-quantum well comprises an InGaN layer and a GaN layer, the structure of the LED epitaxial structure is characterized in that the electron blocking layer sequentially comprises a p-type AlGa<1-x>N layer, an AlN layer and a p-type InGa<1-y>N layer from bottom to top, x is more than 0 but less than or equal to 0.3, y is more than 0 but less than or equal to 0.2, the electronic blocking layer comprises 8-12 growth periods, the growth pressure is 100-200Torr, and the electronic blocking layer is grown in a nitrogen environment. The electron blocking layer comprises the p-type AlGa<1-x>N layer, the</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD2cXVRSC3ILEmsyEzMUSguKSpNLiktSlUozyzJUMjITAcS-TmpCpl5WanJJZn5eQqpaWmZyZmpecmVPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7Uk3tnP0MDMxMLM1NzY0ZgYNQCjpy91</recordid><startdate>20170308</startdate><enddate>20170308</enddate><creator>ZHENG JIANQIN</creator><creator>TIAN YU</creator><creator>LAI ZHIHAO</creator><creator>LIN ZHENGZHI</creator><creator>WU ZHENLONG</creator><creator>ZENG QIYAO</creator><scope>EVB</scope></search><sort><creationdate>20170308</creationdate><title>LED epitaxial structure with high hole injection efficiency</title><author>ZHENG JIANQIN ; TIAN YU ; LAI ZHIHAO ; LIN ZHENGZHI ; WU ZHENLONG ; ZENG QIYAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN106486573A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHENG JIANQIN</creatorcontrib><creatorcontrib>TIAN YU</creatorcontrib><creatorcontrib>LAI ZHIHAO</creatorcontrib><creatorcontrib>LIN ZHENGZHI</creatorcontrib><creatorcontrib>WU ZHENLONG</creatorcontrib><creatorcontrib>ZENG QIYAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHENG JIANQIN</au><au>TIAN YU</au><au>LAI ZHIHAO</au><au>LIN ZHENGZHI</au><au>WU ZHENLONG</au><au>ZENG QIYAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LED epitaxial structure with high hole injection efficiency</title><date>2017-03-08</date><risdate>2017</risdate><abstract>The invention discloses an LED epitaxial structure with high hole injection efficiency, and relates to the technical field of light emitting diode epitaxy. The LED epitaxial structure sequentially comprises a substrate, a GaN buffer layer, a non-doped GaN layer, an N-type GaN layer, a multiple-quantum well, an electron blocking layer, a P-type GaN layer and a P-type contact layer from bottom to top, wherein the multiple-quantum well comprises an InGaN layer and a GaN layer, the structure of the LED epitaxial structure is characterized in that the electron blocking layer sequentially comprises a p-type AlGa<1-x>N layer, an AlN layer and a p-type InGa<1-y>N layer from bottom to top, x is more than 0 but less than or equal to 0.3, y is more than 0 but less than or equal to 0.2, the electronic blocking layer comprises 8-12 growth periods, the growth pressure is 100-200Torr, and the electronic blocking layer is grown in a nitrogen environment. The electron blocking layer comprises the p-type AlGa<1-x>N layer, the</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN106486573A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | LED epitaxial structure with high hole injection efficiency |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T20%3A49%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHENG%20JIANQIN&rft.date=2017-03-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN106486573A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |