Polysilicon etching method

The invention provides a polysilicon etching method. The method comprises the following steps of S1, forming a SiN layer on the surface of a polysilicon layer, etching the SiN layer and patterning the SiN layer to obtain a SiN hard mask layer; S2, forming an oxide layer between SiN residual particle...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHU JIANXIAO, XU PEIMING, WANG HAILIAN, ZHAO LIANGUO, LUO DENGGUI, PENG KUN, WANG FENG, CHEN WENFU, HU XIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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