Semiconductor device and manufacturing method thereof

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a semiconductor layer, an electrode arranged on the semiconductor layer, a dielectric layer arranged on the semiconductor layer and the electrode, and an adhesive layer arranged between the dielectric layer and the electrode, wherein the electrode is partially covered by the medium layer. According to the semiconductor device, the first adhesive layer is formed between the medium layer and an upper surface of the electrode, performance of a juncture between the electrode and the medium is improved, the medium layer is prevented from cracking or shedding, and the yield and reliability of the semiconductor device are improved. 本发明公开了种半导体器件及其制备方法，其中，半导体器件包括半导体层；位于所述半导体层上的电极；位于所述半导体层上和所述电极上的介质层，所述电极部分被所述介质层覆盖；位于所述介质层与所述电极之间的粘附层。本发明在介质层与电极上表面之间形成第粘附层，提高了电极和介质间交界处的性能，防止介质层出现裂纹或脱落，提高了半导体器件的成品率和可靠性。