Method for controllable adjustment of graphene band gap based on doping of oxygen atoms

The invention provides a method for controllable adjustment of a graphene band gap based on doping of oxygen atoms. The method comprises the following steps of step 1, performing pretreatment on the surface of silicon carbide, and putting the pretreated silicon carbide in a sample box; step 2, before epitaxial growth of graphene, etching the surface of the silicon carbide pretreated in the step 1 with hydrogen; step 3, preparing graphene through epitaxial growth: under the condition that inert gas exists, annealing the etched silicon carbide in the step 2, so as to obtain monolayer graphene; and step 4, placing the monolayer graphene prepared in the step 3 under a vacuum condition, then inflating oxygen of which the purity is 99.5-99.9%, under the heating condition of a metal tungsten filament, splitting oxygen molecules into oxygen atoms, leading the split oxygen atoms in monolayer graphene samples, controlling the exposure quantity of the oxygen atoms to the surface of the graphene, and realizing controllab