Thin film capacitor

A lower electrode (4) can have an uneven surface structure. An upper electrode (6) can also have the uneven surface structure. A projecting portion of the upper electrode (6) projecting to the lower electrode side is positioned in a gap between projecting portions of the lower electrode (4) and the lower electrode (4) includes Cu as a main component. Young's moduli of a substrate (1), a stress adjustment layer (2), and the lower electrode (4) have a specific relation. Also, corner portions of radii (R1) of curvature positioned inside a projecting portion (4 b) have a specific relation. 本发明所涉及的薄膜电容器具有特征：下部电极(4)能够具有凹凸结构，上部电极(6)也能够具有凹凸结构，上部电极(6)的向下部电极侧突出的凸部位于下部电极(4)的凸部之间的间隙，下部电极(4)含有作为主成分的Cu，基板(1)和应力调整层(2)以及下部电极(4)的杨氏模量具有特定的关系，另外，位于凸部(4b)内部的曲率半径R1的角部具有特定的关系。