Preparation method for room-temperature diluted magnetic semiconductor

The invention discloses a preparation method for a room-temperature diluted magnetic semiconductor, and belongs to the technical field of preparation of diluted magnetic semiconductors. The method comprises the steps of dissolving metal salt and a malonic acid solution into an alcoholic solution, adjusting the pH value to be neutral, filtering, washing and drying after reaction, and thus obtaining a malonic acid complex; burning the malonic acid complex at high temperature for a period, and thus obtaining the room-temperature diluted magnetic semiconductor. According to the method, in the zinc oxide semiconductor compounded by using the complex as the precursor, the transition manganese metal with different concentrations are doped, and the manganese-doped room-temperature diluted magnetic semiconductor material with the room-temperature ferromagnetism is obtained after burning at different temperatures. 本发明公开了种室温稀磁半导体的制备方法，属于稀磁半导体制备技术领域。该方法将金属盐和丙二酸溶解到醇溶液中，调节pH值至中性，反应后过滤，洗涤，干燥，得到丙二酸配合物；将丙二酸配合物在高温煅烧段时间，得到该室温稀磁