High-speed modulation light emitting diode and manufacturing method thereof

The invention relates to a high-speed modulation light emitting diode and a manufacturing method thereof. The light emitting diode comprises a light emitting diode chip comprising a light emitting epitaxial structure. The light emitting epitaxial structure comprises a buffering layer, a first N-type gallium nitride contact layer, a gallium nitride depletion layer, a P-type aluminum gallium nitride electronic barrier layer, a first P-type indium gallium nitrogen layer, a quantum well layer, a second P-type indium gallium nitrogen layer, an N-type gallium nitride layer, a second N-type gallium nitride contact layer and a conductive layer. The quantum well layer is one of an undoped InGaN/InGaN quantum well layer and an indium gallium nitrogen/gallium nitride quantum well layer of a silicon doping barrier whose deposition quardi-period condensation is 5*1017 cm. The invention also provides a manufacturing method of the high-speed modulation light emitting diode. According to the inventi