Preparation method of silicon dioxide passivation film of crystalline silicon solar cell

The invention provides a preparation method of a silicon dioxide passivation film of a crystalline silicon solar cell. The method comprises: (1) performing cleaning texturing and diffusion-type PN junction processing on a surface of a silicon wafer, and removing an edge junction and surface layer ph...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GUO KAIHUA, ZOU KAI, HE JIANGBIAN, GUO YONGQIANG, LI JIAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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