Graphite disc rotary sealing device of silicon epitaxy apparatus, and automatic feeding and blanking system
The invention discloses a graphite disc rotary sealing device of a silicon epitaxy apparatus, and an automatic feeding and blanking system. The graphite disc rotary sealing device comprises a reaction chamber, a graphite disc and a quartz shaft, the top end of the quartz shaft is connected with the...
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creator | CHEN TECHAO LIU XIN HU FAN CHEN QINGGUANG |
description | The invention discloses a graphite disc rotary sealing device of a silicon epitaxy apparatus, and an automatic feeding and blanking system. The graphite disc rotary sealing device comprises a reaction chamber, a graphite disc and a quartz shaft, the top end of the quartz shaft is connected with the graphite disc and drives the graphite disc to rotate in the reaction chamber, the bottom end of the quartz shaft is fixedly sleeved with a magnetofluid for rotary sealing, a gas inlet corrugated tube is arranged above the magnetofluid, a gas inlet channel is arranged between the quartz shaft and the inner wall of the reaction chamber, and the gas inlet of the gas inlet corrugated tube is connected with the gas inlet channel. The magnetofluid of the graphite disc rotary sealing device of the silicon epitaxy apparatus is fixedly sleeved at the bottom end of the quartz shaft, a gas is introduced to the gas inlet channel through the gas inlet corrugated tube and flows upward, so downward flow of the epitaxial technology gas, contact with the magnetofluid and corrosion of the gas to the magnetofluid are obstructed, the rotary sealing performance is improved, and the leakage rate of the epitaxial reaction chamber is reduced, thereby the technology uniformity of epitaxial wafers is improved. |
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The graphite disc rotary sealing device comprises a reaction chamber, a graphite disc and a quartz shaft, the top end of the quartz shaft is connected with the graphite disc and drives the graphite disc to rotate in the reaction chamber, the bottom end of the quartz shaft is fixedly sleeved with a magnetofluid for rotary sealing, a gas inlet corrugated tube is arranged above the magnetofluid, a gas inlet channel is arranged between the quartz shaft and the inner wall of the reaction chamber, and the gas inlet of the gas inlet corrugated tube is connected with the gas inlet channel. The magnetofluid of the graphite disc rotary sealing device of the silicon epitaxy apparatus is fixedly sleeved at the bottom end of the quartz shaft, a gas is introduced to the gas inlet channel through the gas inlet corrugated tube and flows upward, so downward flow of the epitaxial technology gas, contact with the magnetofluid and corrosion of the gas to the magnetofluid are obstructed, the rotary sealing performance is improved, and the leakage rate of the epitaxial reaction chamber is reduced, thereby the technology uniformity of epitaxial wafers is improved.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160224&DB=EPODOC&CC=CN&NR=105350073A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160224&DB=EPODOC&CC=CN&NR=105350073A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN TECHAO</creatorcontrib><creatorcontrib>LIU XIN</creatorcontrib><creatorcontrib>HU FAN</creatorcontrib><creatorcontrib>CHEN QINGGUANG</creatorcontrib><title>Graphite disc rotary sealing device of silicon epitaxy apparatus, and automatic feeding and blanking system</title><description>The invention discloses a graphite disc rotary sealing device of a silicon epitaxy apparatus, and an automatic feeding and blanking system. The graphite disc rotary sealing device comprises a reaction chamber, a graphite disc and a quartz shaft, the top end of the quartz shaft is connected with the graphite disc and drives the graphite disc to rotate in the reaction chamber, the bottom end of the quartz shaft is fixedly sleeved with a magnetofluid for rotary sealing, a gas inlet corrugated tube is arranged above the magnetofluid, a gas inlet channel is arranged between the quartz shaft and the inner wall of the reaction chamber, and the gas inlet of the gas inlet corrugated tube is connected with the gas inlet channel. The magnetofluid of the graphite disc rotary sealing device of the silicon epitaxy apparatus is fixedly sleeved at the bottom end of the quartz shaft, a gas is introduced to the gas inlet channel through the gas inlet corrugated tube and flows upward, so downward flow of the epitaxial technology gas, contact with the magnetofluid and corrosion of the gas to the magnetofluid are obstructed, the rotary sealing performance is improved, and the leakage rate of the epitaxial reaction chamber is reduced, thereby the technology uniformity of epitaxial wafers is improved.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7sKwkAQRdNYiPoPY68QCcFago_Kyj6MuxMzZLO77EzE_XsJ-AFWl3M4d1kM14SxZyWwLAZSUEwZhNCxf4GlNxuC0IGwYxM8UGTFTwaMERPqJDtAbwEnDSMqG-iI7Hyd7dOhH2aQLErjulh06IQ2v10V28v50dz2FENLEtGQJ22b-6Gsq7osj9Wp-qf5AufjQX4</recordid><startdate>20160224</startdate><enddate>20160224</enddate><creator>CHEN TECHAO</creator><creator>LIU XIN</creator><creator>HU FAN</creator><creator>CHEN QINGGUANG</creator><scope>EVB</scope></search><sort><creationdate>20160224</creationdate><title>Graphite disc rotary sealing device of silicon epitaxy apparatus, and automatic feeding and blanking system</title><author>CHEN TECHAO ; LIU XIN ; HU FAN ; CHEN QINGGUANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN105350073A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN TECHAO</creatorcontrib><creatorcontrib>LIU XIN</creatorcontrib><creatorcontrib>HU FAN</creatorcontrib><creatorcontrib>CHEN QINGGUANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN TECHAO</au><au>LIU XIN</au><au>HU FAN</au><au>CHEN QINGGUANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Graphite disc rotary sealing device of silicon epitaxy apparatus, and automatic feeding and blanking system</title><date>2016-02-24</date><risdate>2016</risdate><abstract>The invention discloses a graphite disc rotary sealing device of a silicon epitaxy apparatus, and an automatic feeding and blanking system. The graphite disc rotary sealing device comprises a reaction chamber, a graphite disc and a quartz shaft, the top end of the quartz shaft is connected with the graphite disc and drives the graphite disc to rotate in the reaction chamber, the bottom end of the quartz shaft is fixedly sleeved with a magnetofluid for rotary sealing, a gas inlet corrugated tube is arranged above the magnetofluid, a gas inlet channel is arranged between the quartz shaft and the inner wall of the reaction chamber, and the gas inlet of the gas inlet corrugated tube is connected with the gas inlet channel. The magnetofluid of the graphite disc rotary sealing device of the silicon epitaxy apparatus is fixedly sleeved at the bottom end of the quartz shaft, a gas is introduced to the gas inlet channel through the gas inlet corrugated tube and flows upward, so downward flow of the epitaxial technology gas, contact with the magnetofluid and corrosion of the gas to the magnetofluid are obstructed, the rotary sealing performance is improved, and the leakage rate of the epitaxial reaction chamber is reduced, thereby the technology uniformity of epitaxial wafers is improved.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
title | Graphite disc rotary sealing device of silicon epitaxy apparatus, and automatic feeding and blanking system |
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