Channel strain control for nonplanar compound semiconductor devices

A circuit device having differently-strained NMOS and PMOS FinFETs is provided. In an exemplary embodiment, a semiconductor device includes a substrate with a first fin structure and a second fin structure formed thereup. The first fin structure includes opposing source/drain regions disposed above...

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Bibliographische Detailangaben

1. Verfasser:	CHING KUONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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