Gridless AlGaN/GaN field effect transistor sensor, and preparation method thereof

The invention provides a gridless AlGaN/GaN field effect transistor sensor. According to the gridless AlGaN/GaN field effect transistor sensor, electrodes are arranged on an AlGaN/GaN heterojunction substrate via vapor deposition; the gridless AlGaN/GaN field effect transistor sensor also comprises...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN DUNJUN, ZHENG YOULIAO, JIA XIULING, ZHANG RONG
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
Online-Zugang:	Volltext bestellen
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