Gas-barrier film and process for producing the same
[Problem] To provide a means whereby gas barrier capabilities, and endurance of gas barrier capabilities, of a gas barrier film may be further improved. [Solution] A gas barrier film having: a base material; a first barrier layer situated on at least one surface of the base material, having a film d...
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| creator | ITO HIROHIDE |
| description | [Problem] To provide a means whereby gas barrier capabilities, and endurance of gas barrier capabilities, of a gas barrier film may be further improved. [Solution] A gas barrier film having: a base material; a first barrier layer situated on at least one surface of the base material, having a film density of 1.5-2.1 c/m3, and containing an inorganic compound; and a second barrier layer formed on the surface of the base material on the same side where the first barrier layer is formed, and containing silicon atoms, oxygen atoms, and at least one added element from the group consisting of elements of Groups 2-14 of the long form of the periodic table (excluding silicon and carbon), the ratio (O/Si) of oxygen atoms to carbon atoms being 1.4-2.2, and the ratio (N/Si) of nitrogen atoms to carbon atoms being 0-0.4. |
| format | Patent |
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[Solution] A gas barrier film having: a base material; a first barrier layer situated on at least one surface of the base material, having a film density of 1.5-2.1 c/m3, and containing an inorganic compound; and a second barrier layer formed on the surface of the base material on the same side where the first barrier layer is formed, and containing silicon atoms, oxygen atoms, and at least one added element from the group consisting of elements of Groups 2-14 of the long form of the periodic table (excluding silicon and carbon), the ratio (O/Si) of oxygen atoms to carbon atoms being 1.4-2.2, and the ratio (N/Si) of nitrogen atoms to carbon atoms being 0-0.4.</description><language>eng</language><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOSITIONS BASED THEREON ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL PROCESSES OF COMPOUNDING ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; PERFORMING OPERATIONS ; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL ; SEMICONDUCTOR DEVICES ; SPRAYING OR ATOMISING IN GENERAL ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; TRANSPORTING ; WORKING-UP</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160113&DB=EPODOC&CC=CN&NR=105246683A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160113&DB=EPODOC&CC=CN&NR=105246683A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITO HIROHIDE</creatorcontrib><title>Gas-barrier film and process for producing the same</title><description>[Problem] To provide a means whereby gas barrier capabilities, and endurance of gas barrier capabilities, of a gas barrier film may be further improved. 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[Solution] A gas barrier film having: a base material; a first barrier layer situated on at least one surface of the base material, having a film density of 1.5-2.1 c/m3, and containing an inorganic compound; and a second barrier layer formed on the surface of the base material on the same side where the first barrier layer is formed, and containing silicon atoms, oxygen atoms, and at least one added element from the group consisting of elements of Groups 2-14 of the long form of the periodic table (excluding silicon and carbon), the ratio (O/Si) of oxygen atoms to carbon atoms being 1.4-2.2, and the ratio (N/Si) of nitrogen atoms to carbon atoms being 0-0.4.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING-UP |
| title | Gas-barrier film and process for producing the same |
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