Method for improving vertical-conductive structured SiC MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) channel mobility

An embodiment of the invention relates to a method for improving the vertical-conductive structured SiC MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) channel mobility. The method comprises steps of forming an N-drift region of a MOSFET on an N+SiC substrate through the epitaxial techno...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG YUMING, LYU HONGLIANG, JIA RENXU, WANG YUCHENG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!