Three-layer core-shell tight ball type MDT silicon resin and preparation method thereof

The invention discloses a three-layer core-shell tight ball type MDT silicon resin and a preparation method thereof. According to the invention, phenyl is connected to the side of a siloxane main chain, on the one hand, the refractive index and the high and low temperature resistance of the product...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DENG ZHIHUA, JI LANXIANG, FU JUNJIE, LIU ZHONGPING, HUANG JIAN, SHANG LIKUN, MA CHUNYAN, BAI XIAOFENG, DENG JIANGUO
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention discloses a three-layer core-shell tight ball type MDT silicon resin and a preparation method thereof. According to the invention, phenyl is connected to the side of a siloxane main chain, on the one hand, the refractive index and the high and low temperature resistance of the product are enhanced, and on the other hand, the hardness of the material is reinforced, and the impact resistance requirement of the material can be satisfied. The outside of the phenyl core is a flexible layer composed of methyl and a small amount of vinyl so as to increase the hot and cold impact resistance of the material during use. The outermost layer is a reaction layer, which is mainly composed of vinyl and methyl, and in a curing process, the material and hydrogen undergo addition reaction to form a cross-linked network. The three-layer structure is in mutual independence and has definite functions, however the layers are connected by Si-O-Si and has a synergistic effect. The three-layer core-shell tight ball type MDT silicon resin synthesized by the method provided by the invention has high refractive index, high light transmittance, high hardness, high temperature resistance and strong cementability, and can be used for high power LED and electronic product packaging.