Process for connecting joining partners by means of an isothermic solidifying reaction in order to form an In-Bi-Ag connecting layer and corresponding arrangement of joining partners

The invention provides a process for connecting joining partners (1, 2), for example an optoelectronic semiconductor chip (e.g. a light-emitting diode chip) and a printed circuit board or a metallic conductor frame, said process comprising the following steps: - providing a first joining partner (1) and a second joining partner (2), - applying a first layer sequence (10) to the first joining partner (1), which sequence comprises at least one layer (11, 15) containing or consisting of silver, - applying a second layer sequence (20) to the second joining partner (2), said sequence comprising at least one layer (29) containing indium and bismuth or a layer (23) containing indium and a layer (22, 24) containing bismuth, - pressing the first layer sequence (10) and the second layer sequence (20) together at the end faces thereof which are remote respectively from the first joining partner (1) and the second joining partner (2) by applying a joining pressure (p) at a joining temperature which is at most 120 DEG C for a predefined joining time, the first layer sequence (10) and the second layer sequence (20) fusing to form a connecting layer (30) which adjoins the first joining partner and the second joining partner directly and the fusion temperature of which is at least 260 DEG C.