Multilayer passivation or etch stop TFT

The present invention generally relates to TFTs and methods for fabricating TFTs. For either back channel etch TFTs or for etch stop TFTs, multiple layers for the passivation layer or the etch stop layers permits a very dense capping layer to be formed over a less dense back channel protection layer...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WON TAE KYUNG, CHO SEON-MEE, YIM DONG-KIL, WHITE JOHN M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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