Single crystal extraction method
The single crystal extraction method is used for shortening the extraction time from the forming of a straight body part to crystal excision from a meltwater, extracting single crystal and improving a rate of finished products. The method comprises a first process, a second process and a third proce...
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| creator | HIDEO KOMATSU YOSHIAKI ABE |
| description | The single crystal extraction method is used for shortening the extraction time from the forming of a straight body part to crystal excision from a meltwater, extracting single crystal and improving a rate of finished products. The method comprises a first process, a second process and a third process. The first process forms the straight body part (C2), and the second process is behind the first process. In the final process of forming the straight body part, a lower protruded shape (C3) protruded downwards is formed at the lower end of the crystal, and the third process is configured to cut the lower protruded shape formed in the second process from the silicon meltwater. In the second process, the field density of the horizontal magnetic field is controlled lower than the first process in the range of 800 to 1000 gausses, the crystal extract speed is controlled lower than the first process in the range of 0.2 to 0.5 mm/min, the crystal rotation speed is controlled lower than the first process in the range of 1 to 3 rpm, and the crucible rotation speed is controlled in the range of 0.5 to 5 rpm. |
| format | Patent |
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The method comprises a first process, a second process and a third process. The first process forms the straight body part (C2), and the second process is behind the first process. In the final process of forming the straight body part, a lower protruded shape (C3) protruded downwards is formed at the lower end of the crystal, and the third process is configured to cut the lower protruded shape formed in the second process from the silicon meltwater. In the second process, the field density of the horizontal magnetic field is controlled lower than the first process in the range of 800 to 1000 gausses, the crystal extract speed is controlled lower than the first process in the range of 0.2 to 0.5 mm/min, the crystal rotation speed is controlled lower than the first process in the range of 1 to 3 rpm, and the crucible rotation speed is controlled in the range of 0.5 to 5 rpm.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151111&DB=EPODOC&CC=CN&NR=105040099A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151111&DB=EPODOC&CC=CN&NR=105040099A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIDEO KOMATSU</creatorcontrib><creatorcontrib>YOSHIAKI ABE</creatorcontrib><title>Single crystal extraction method</title><description>The single crystal extraction method is used for shortening the extraction time from the forming of a straight body part to crystal excision from a meltwater, extracting single crystal and improving a rate of finished products. 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The method comprises a first process, a second process and a third process. The first process forms the straight body part (C2), and the second process is behind the first process. In the final process of forming the straight body part, a lower protruded shape (C3) protruded downwards is formed at the lower end of the crystal, and the third process is configured to cut the lower protruded shape formed in the second process from the silicon meltwater. In the second process, the field density of the horizontal magnetic field is controlled lower than the first process in the range of 800 to 1000 gausses, the crystal extract speed is controlled lower than the first process in the range of 0.2 to 0.5 mm/min, the crystal rotation speed is controlled lower than the first process in the range of 1 to 3 rpm, and the crucible rotation speed is controlled in the range of 0.5 to 5 rpm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Single crystal extraction method |
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