Silicon controlled rectifier

The invention provides a silicon controlled rectifier comprising a substrate; an N well region and a P well region which are arranged at the first side of the substrate and adjacent to each other; a first N-type doped region and a first P-type doped region which are arranged at the upper surface of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LI JIANXING, HUANG ZONGYI, GAO ZICHENG, HONG CHONGYOU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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