THIN FILM SILICON NITRIDE BARRIER LAYERS ON FLEXIBLE SUBSTRATE

THIN FILM SILICON NITRIDE BARRIER LAYERS ON FLEXIBLE SUBSTRATE

An article comprising a polymeric substrate and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress not greater than about 400 MPa and a density of at least about 1.5 g/cm3. The article is preferably an optical device, such as an organic light emitting diode (OLED)...

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Hauptverfasser: DHAR ANIRBAN, GIASSI ALESSANDRO
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator DHAR ANIRBAN
GIASSI ALESSANDRO
description An article comprising a polymeric substrate and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress not greater than about 400 MPa and a density of at least about 1.5 g/cm3. The article is preferably an optical device, such as an organic light emitting diode (OLED) or a photovoltaic (PV) module, wherein a silicon nitride barrier layer has been directly deposited on a flexible polymeric substrate via plasma enhanced chemical vapor deposition (PECVD).
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title THIN FILM SILICON NITRIDE BARRIER LAYERS ON FLEXIBLE SUBSTRATE
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