Integrated energy collecting store with three-dimensional stack/trench composite structure

The invention discloses an integrated energy collecting store with a three-dimensional stack/trench composite structure. The integrated energy collecting store is characterized in that an energy collecting store is integrated on a substrate with a PN junction, wherein a P type semiconductor area and an N type semiconductor area of the PN junction are respectively connected with a metal electrode to serve as energy collectors; the three-dimensional stack/trench composite structure is arranged on the side, opposite to the PN junction, of the substrate to serve as an energy store; and the composite structure is characterized in that a three-dimensional trench structure is firstly arranged on the substrate, then metal layers and medium layers are alternatively deposited on the substrate provided with the trench structure to form a plurality of parallelly-connected capacitor, finally the top part is the metal layer which fills the trench and covers the surface of the substrate, and the top metal layer and the bottom metal layer are respectively connected with a metal electrode. By adopting the three-dimensional structure, the capacity of the memory is improved, the cost is reduced, and the size is reduced; in addition, the preparing technology flow is simple and is compatible with a low-cost integrated circuit technology.