Preparation method of MTM antifuse

The invention relates to a preparation method of an MTM antifuse, belonging to the technical field of integrated circuits. The preparation method comprises that A) an intermetallic dielectric layer and a lower metal layer are successively deposited on a silicon substrate and a completed device layer...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XU HAIMING, TANG SAINAN, WANG YINQUAN, HONG GENSHEN, ZHENG LIANGCHEN, ZHENG RUOCHENG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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