Preparation method of MTM antifuse

The invention relates to a preparation method of an MTM antifuse, belonging to the technical field of integrated circuits. The preparation method comprises that A) an intermetallic dielectric layer and a lower metal layer are successively deposited on a silicon substrate and a completed device layer; B) a first barrier layer is deposited; C) an antifuse dielectric layer is deposited; D) SES technical processing is carried out on the antifuse dielectric layer to improve the non-crystallization degree of the antifuse dielectric layer; E) a second barrier layer is deposited; F) MTM antifuse lithography and corrosion are carried out to form an upper pole plate portion of an MTM antifuse structure; G) lithography and corrosion are carried out on the lower metal layer to form a lower pole plate portion of the MTM antifuse structure; and H) a second intermetallic dielectric layer and an upper metal layer are deposited, and lithography and corrosion are carried out on the upper metal layer, to form a complete structure of the MTM antifuse. The non-crystallization degree of the antifuse is greatly improved, and the breakdown consistency of the dielectric layers of the antifuse is improved.