Method for improving time storage efficiency of ONO structure in SONOS flash memory

Method for improving time storage efficiency of ONO structure in SONOS flash memory

Provided is a method for improving the time storage efficiency of an ONO structure in an SONOS flash memory. When a silicon oxy-nitride layer is generated, the ratio of nitrous oxide to ammonia is controlled to enable main distribution of Si-H bonds to migrate from the interface of a tunnel oxide la...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZHANG LINGYUE, ZHANG MENG, GUAN BAOHUI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ZHANG LINGYUE
ZHANG MENG
GUAN BAOHUI
description Provided is a method for improving the time storage efficiency of an ONO structure in an SONOS flash memory. When a silicon oxy-nitride layer is generated, the ratio of nitrous oxide to ammonia is controlled to enable main distribution of Si-H bonds to migrate from the interface of a tunnel oxide layer and the silicon oxy-nitride layer to the interface of the silicon oxy-nitride layer and a high-temperature oxide (HTO) layer. As the HTO layer is much thicker than the tunnel oxide layer, the possibility that electrons stored in the silicon oxy-nitride layer escape through the tunnel oxide layer is reduced, the time storage efficiency of an ONO layer is improved, and the yield rate and the reliability of the SONOS flash memory are improved.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104779208A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104779208A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104779208A3</originalsourceid><addsrcrecordid>eNqNiksKwjAQQLNxIeodxgMI9QPVpRTFje0i7kuIk3agyYRJKvT2duEBXD147y2VfmLu-Q2OBchH4Q-FDjJ5hJRZTIeAzpElDHYCdtDUzVxktHkUBAqgZ6PBDSb14NGzTGu1cGZIuPlxpbb326t67DByiykaiwFzW9X74lSWl0Nxvh7_eb4NeTfE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for improving time storage efficiency of ONO structure in SONOS flash memory</title><source>esp@cenet</source><creator>ZHANG LINGYUE ; ZHANG MENG ; GUAN BAOHUI</creator><creatorcontrib>ZHANG LINGYUE ; ZHANG MENG ; GUAN BAOHUI</creatorcontrib><description>Provided is a method for improving the time storage efficiency of an ONO structure in an SONOS flash memory. When a silicon oxy-nitride layer is generated, the ratio of nitrous oxide to ammonia is controlled to enable main distribution of Si-H bonds to migrate from the interface of a tunnel oxide layer and the silicon oxy-nitride layer to the interface of the silicon oxy-nitride layer and a high-temperature oxide (HTO) layer. As the HTO layer is much thicker than the tunnel oxide layer, the possibility that electrons stored in the silicon oxy-nitride layer escape through the tunnel oxide layer is reduced, the time storage efficiency of an ONO layer is improved, and the yield rate and the reliability of the SONOS flash memory are improved.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150715&amp;DB=EPODOC&amp;CC=CN&amp;NR=104779208A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150715&amp;DB=EPODOC&amp;CC=CN&amp;NR=104779208A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG LINGYUE</creatorcontrib><creatorcontrib>ZHANG MENG</creatorcontrib><creatorcontrib>GUAN BAOHUI</creatorcontrib><title>Method for improving time storage efficiency of ONO structure in SONOS flash memory</title><description>Provided is a method for improving the time storage efficiency of an ONO structure in an SONOS flash memory. When a silicon oxy-nitride layer is generated, the ratio of nitrous oxide to ammonia is controlled to enable main distribution of Si-H bonds to migrate from the interface of a tunnel oxide layer and the silicon oxy-nitride layer to the interface of the silicon oxy-nitride layer and a high-temperature oxide (HTO) layer. As the HTO layer is much thicker than the tunnel oxide layer, the possibility that electrons stored in the silicon oxy-nitride layer escape through the tunnel oxide layer is reduced, the time storage efficiency of an ONO layer is improved, and the yield rate and the reliability of the SONOS flash memory are improved.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNiksKwjAQQLNxIeodxgMI9QPVpRTFje0i7kuIk3agyYRJKvT2duEBXD147y2VfmLu-Q2OBchH4Q-FDjJ5hJRZTIeAzpElDHYCdtDUzVxktHkUBAqgZ6PBDSb14NGzTGu1cGZIuPlxpbb326t67DByiykaiwFzW9X74lSWl0Nxvh7_eb4NeTfE</recordid><startdate>20150715</startdate><enddate>20150715</enddate><creator>ZHANG LINGYUE</creator><creator>ZHANG MENG</creator><creator>GUAN BAOHUI</creator><scope>EVB</scope></search><sort><creationdate>20150715</creationdate><title>Method for improving time storage efficiency of ONO structure in SONOS flash memory</title><author>ZHANG LINGYUE ; ZHANG MENG ; GUAN BAOHUI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104779208A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG LINGYUE</creatorcontrib><creatorcontrib>ZHANG MENG</creatorcontrib><creatorcontrib>GUAN BAOHUI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG LINGYUE</au><au>ZHANG MENG</au><au>GUAN BAOHUI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for improving time storage efficiency of ONO structure in SONOS flash memory</title><date>2015-07-15</date><risdate>2015</risdate><abstract>Provided is a method for improving the time storage efficiency of an ONO structure in an SONOS flash memory. When a silicon oxy-nitride layer is generated, the ratio of nitrous oxide to ammonia is controlled to enable main distribution of Si-H bonds to migrate from the interface of a tunnel oxide layer and the silicon oxy-nitride layer to the interface of the silicon oxy-nitride layer and a high-temperature oxide (HTO) layer. As the HTO layer is much thicker than the tunnel oxide layer, the possibility that electrons stored in the silicon oxy-nitride layer escape through the tunnel oxide layer is reduced, the time storage efficiency of an ONO layer is improved, and the yield rate and the reliability of the SONOS flash memory are improved.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_CN104779208A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for improving time storage efficiency of ONO structure in SONOS flash memory
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T06%3A49%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHANG%20LINGYUE&rft.date=2015-07-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104779208A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true