Formation method of semiconductor device

The invention provides a formation method of a semiconductor device. After a grid medium layer is formed on a semiconductor substrate, a first material layer, a barrier layer and a second material layer are sequentially formed on the grid medium layer from bottom to top, and the second material laye...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUI YUNQI, ZENG YIZHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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