Forming method for semiconductor device and grid electrode

The invention provides a forming method for a semiconductor device and a grid electrode. In the forming method of the semiconductor device, photoresist layers are subjected to patterning for forming photoresist patterns, the photoresist patterns are subjected to softening procesing process, and the surface roughness of the photoresist patterns is reduced; then, ion gas such as Ar is adopted for processing the photoresist patterns, and the stacking formed at the bottom of the side wall of the photoresist due to partial photoresist during the photoresist pattern side wall sliding in the softening processing process is avoided; then, the photoresist patterns are subjected to curing processing, the photoresist pattern structure is enhanced, in addition, a decoration layer is formed on the surface of the photoresist pattern for further improving the surface smoothness of the photoresist patterns, the photoresist pattern structure is optimized, the precision of the photoresist pattern and the precision of the hard mask patterns obtained by using the photoresist patterns as the masks for etching the mask layer in the subsequent process are ensured, and the structure precision of the semiconductor device formed by using the hard mask patterns as the masks for etching the materials to be etched in the subsequent process is improved.