Semiconductor structure

The invention discloses a semiconductor structure. The semiconductor structure comprises a substrate with a first conduction type, a deep well with a second conduction type, a first well with the first conduction type, a second well with the second conduction type, a grid electrode, a first insulato...

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Hauptverfasser:	XU MINGSHUN, XIAO SHIYING, WANG ZHICHONG, LI QIUDE, CAI SUHUA, LIN KEFENG, LIAO XUANBO, HUANG SHITENG, LIN SHUWEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	XU MINGSHUN XIAO SHIYING WANG ZHICHONG LI QIUDE CAI SUHUA LIN KEFENG LIAO XUANBO HUANG SHITENG LIN SHUWEN
description	The invention discloses a semiconductor structure. The semiconductor structure comprises a substrate with a first conduction type, a deep well with a second conduction type, a first well with the first conduction type, a second well with the second conduction type, a grid electrode, a first insulator and a second insulator, wherein the deep well is formed inside the substrate and extends downwards from the surface of the substrate; the first well and the second well extend downwards from the surface of the substrate to be formed in the deep well; the first well is separated from the first well; the grid electrode is formed on the substrate and arranged between the first well and the second well; the first insulator extends downwards from the surface of the substrate and is formed between the grid electrode and the second well; the second insulator extends downwards from the surface of the substrate and is adjoined with the first well; the ratio of the depth of the first insulator to the depth of the second insulator is less than 1.
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The semiconductor structure comprises a substrate with a first conduction type, a deep well with a second conduction type, a first well with the first conduction type, a second well with the second conduction type, a grid electrode, a first insulator and a second insulator, wherein the deep well is formed inside the substrate and extends downwards from the surface of the substrate; the first well and the second well extend downwards from the surface of the substrate to be formed in the deep well; the first well is separated from the first well; the grid electrode is formed on the substrate and arranged between the first well and the second well; the first insulator extends downwards from the surface of the substrate and is formed between the grid electrode and the second well; the second insulator extends downwards from the surface of the substrate and is adjoined with the first well; the ratio of the depth of the first insulator to the depth of the second insulator is less than 1.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150527&DB=EPODOC&CC=CN&NR=104659092A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150527&DB=EPODOC&CC=CN&NR=104659092A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XU MINGSHUN</creatorcontrib><creatorcontrib>XIAO SHIYING</creatorcontrib><creatorcontrib>WANG ZHICHONG</creatorcontrib><creatorcontrib>LI QIUDE</creatorcontrib><creatorcontrib>CAI SUHUA</creatorcontrib><creatorcontrib>LIN KEFENG</creatorcontrib><creatorcontrib>LIAO XUANBO</creatorcontrib><creatorcontrib>HUANG SHITENG</creatorcontrib><creatorcontrib>LIN SHUWEN</creatorcontrib><title>Semiconductor structure</title><description>The invention discloses a semiconductor structure. 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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Semiconductor structure
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