LDMOS (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) device and manufacturing method

The invention discloses an LDMOS (Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor) device. An N-type injection layer formed by high-dose N-type impurity injection is additionally arranged in a drift region consisting of an N-type epitaxial layer; a P-type auxiliary depletio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SHI JING, QIAN WENSHENG, LIU DONGHUA, CI PENGLIANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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