Thin film transistor used for soft electronics and forming method of thin film transistor
The invention provides a thin film transistor used for soft electronics and a forming method of the thin film transistor. The thin film transistor is arranged on a soft plastic substrate, and comprises a circular grid electrode layer which is arranged on the soft plastic substrate, a dielectric laye...
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| creator | SUN SHUOYANG HUANG WANZHEN ZHENG JUNCHENG |
| description | The invention provides a thin film transistor used for soft electronics and a forming method of the thin film transistor. The thin film transistor is arranged on a soft plastic substrate, and comprises a circular grid electrode layer which is arranged on the soft plastic substrate, a dielectric layer covering the circular grid electrode layer and the soft plastic substrate, a circular driving layer arranged on the dielectric layer, an annular drain electrode layer arranged on the circular driving layer, a circular source electrode layer arranged on the circular driving layer, a transparent electrode layer arranged on the circular source electrode layer, and a protection layer covering the annular drain electrode layer and the circular source electrode layer, wherein the thin film transistor is symmetrical about the structural central point of the thin film transistor, the area of the circular grid electrode layer is smaller than the area of the circular driving layer, and the circular grid electrode layer is located in the projection area of the circular driving layer. Compared with the prior art, the thin film transistor has high stability when bent, and no direction selection problem can happen in the bending process. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104617154A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104617154A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104617154A3</originalsourceid><addsrcrecordid>eNrjZIgMycjMU0jLzMlVKClKzCvOLC7JL1IoLU5NUUgDMorz00oUUnNSk0uK8vMyk4sVEvPAErmZeekKuaklGfkpCvlpCiVYDOFhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYGJmaG5oamJo7GxKgBAAC4Ouw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Thin film transistor used for soft electronics and forming method of thin film transistor</title><source>esp@cenet</source><creator>SUN SHUOYANG ; HUANG WANZHEN ; ZHENG JUNCHENG</creator><creatorcontrib>SUN SHUOYANG ; HUANG WANZHEN ; ZHENG JUNCHENG</creatorcontrib><description>The invention provides a thin film transistor used for soft electronics and a forming method of the thin film transistor. The thin film transistor is arranged on a soft plastic substrate, and comprises a circular grid electrode layer which is arranged on the soft plastic substrate, a dielectric layer covering the circular grid electrode layer and the soft plastic substrate, a circular driving layer arranged on the dielectric layer, an annular drain electrode layer arranged on the circular driving layer, a circular source electrode layer arranged on the circular driving layer, a transparent electrode layer arranged on the circular source electrode layer, and a protection layer covering the annular drain electrode layer and the circular source electrode layer, wherein the thin film transistor is symmetrical about the structural central point of the thin film transistor, the area of the circular grid electrode layer is smaller than the area of the circular driving layer, and the circular grid electrode layer is located in the projection area of the circular driving layer. Compared with the prior art, the thin film transistor has high stability when bent, and no direction selection problem can happen in the bending process.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150513&DB=EPODOC&CC=CN&NR=104617154A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150513&DB=EPODOC&CC=CN&NR=104617154A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUN SHUOYANG</creatorcontrib><creatorcontrib>HUANG WANZHEN</creatorcontrib><creatorcontrib>ZHENG JUNCHENG</creatorcontrib><title>Thin film transistor used for soft electronics and forming method of thin film transistor</title><description>The invention provides a thin film transistor used for soft electronics and a forming method of the thin film transistor. The thin film transistor is arranged on a soft plastic substrate, and comprises a circular grid electrode layer which is arranged on the soft plastic substrate, a dielectric layer covering the circular grid electrode layer and the soft plastic substrate, a circular driving layer arranged on the dielectric layer, an annular drain electrode layer arranged on the circular driving layer, a circular source electrode layer arranged on the circular driving layer, a transparent electrode layer arranged on the circular source electrode layer, and a protection layer covering the annular drain electrode layer and the circular source electrode layer, wherein the thin film transistor is symmetrical about the structural central point of the thin film transistor, the area of the circular grid electrode layer is smaller than the area of the circular driving layer, and the circular grid electrode layer is located in the projection area of the circular driving layer. Compared with the prior art, the thin film transistor has high stability when bent, and no direction selection problem can happen in the bending process.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgMycjMU0jLzMlVKClKzCvOLC7JL1IoLU5NUUgDMorz00oUUnNSk0uK8vMyk4sVEvPAErmZeekKuaklGfkpCvlpCiVYDOFhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYGJmaG5oamJo7GxKgBAAC4Ouw</recordid><startdate>20150513</startdate><enddate>20150513</enddate><creator>SUN SHUOYANG</creator><creator>HUANG WANZHEN</creator><creator>ZHENG JUNCHENG</creator><scope>EVB</scope></search><sort><creationdate>20150513</creationdate><title>Thin film transistor used for soft electronics and forming method of thin film transistor</title><author>SUN SHUOYANG ; HUANG WANZHEN ; ZHENG JUNCHENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104617154A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SUN SHUOYANG</creatorcontrib><creatorcontrib>HUANG WANZHEN</creatorcontrib><creatorcontrib>ZHENG JUNCHENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUN SHUOYANG</au><au>HUANG WANZHEN</au><au>ZHENG JUNCHENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thin film transistor used for soft electronics and forming method of thin film transistor</title><date>2015-05-13</date><risdate>2015</risdate><abstract>The invention provides a thin film transistor used for soft electronics and a forming method of the thin film transistor. The thin film transistor is arranged on a soft plastic substrate, and comprises a circular grid electrode layer which is arranged on the soft plastic substrate, a dielectric layer covering the circular grid electrode layer and the soft plastic substrate, a circular driving layer arranged on the dielectric layer, an annular drain electrode layer arranged on the circular driving layer, a circular source electrode layer arranged on the circular driving layer, a transparent electrode layer arranged on the circular source electrode layer, and a protection layer covering the annular drain electrode layer and the circular source electrode layer, wherein the thin film transistor is symmetrical about the structural central point of the thin film transistor, the area of the circular grid electrode layer is smaller than the area of the circular driving layer, and the circular grid electrode layer is located in the projection area of the circular driving layer. Compared with the prior art, the thin film transistor has high stability when bent, and no direction selection problem can happen in the bending process.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Thin film transistor used for soft electronics and forming method of thin film transistor |
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