Oxide film transistor and manufacturing method thereof

The invention discloses an oxide film transistor and a manufacturing method thereof. The manufacturing method comprises sequentially forming a grid electrode, a grid electrode insulating layer and an oxide semiconductor film layer; sequentially forming a first metal layer and a second metal layer on...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	CHI SHIPENG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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