Endpoint detection for photomask etching

Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber (10; 900;2500) with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced proce...

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Bibliographische Detailangaben
1. Verfasser:	GRIMBERGEN MICHAEL
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber (10; 900;2500) with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.