SiC metal oxide semiconductor (MOS) capacitor of Al2O3/LaLuO3/SiO2 stacked gate dielectric layer and production method of SiC MOS capacitor

The invention relates to a SiC metal oxide semiconductor (MOS) capacitor of an Al2O3/LaLuO3/SiO2 stacked gate dielectric layer and a production method of the SiC MOS capacitor. The SiC MOS capacitor comprises a heavily doped SiC substrate layer; a lightly doped SiC epitaxial layer is on the SiC subs...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG YUMING, LYU HONGLIANG, JIA RENXU, ZHAO DONGHUI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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