integrated circuit and method of manufacturing integrated circuit

integrated circuit and method of manufacturing integrated circuit

An integrated circuit and a method of manufacturing the integrated circuit are disclosed. The integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the pow...

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1. Verfasser: BRITTA WUTTE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator BRITTA WUTTE
description An integrated circuit and a method of manufacturing the integrated circuit are disclosed. The integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other. A second conductive material in the first and the second diode device trenches is electrically coupled to a source terminal of the diode component. The first trenches, the first diode device trench and the second diode device trench are disposed in a first main surface of a semiconductor substrate. The integrated circuit further includes a diode gate contact including a connection structure between the first and the second diode device trenches. The connection structure is in contact with the second conductive material in the first and the second diode device trenches.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN104600067A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN104600067A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN104600067A3</originalsourceid><addsrcrecordid>eNrjZHDMzCtJTS9KLElNUUjOLEouzSxRSMxLUchNLcnIT1HIT1PITcwrTUtMLiktysxLV8BUzsPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4p39DA1MzAwMDMzMHY2JUQMAQ_0yKQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>integrated circuit and method of manufacturing integrated circuit</title><source>esp@cenet</source><creator>BRITTA WUTTE</creator><creatorcontrib>BRITTA WUTTE</creatorcontrib><description>An integrated circuit and a method of manufacturing the integrated circuit are disclosed. The integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other. A second conductive material in the first and the second diode device trenches is electrically coupled to a source terminal of the diode component. The first trenches, the first diode device trench and the second diode device trench are disposed in a first main surface of a semiconductor substrate. The integrated circuit further includes a diode gate contact including a connection structure between the first and the second diode device trenches. The connection structure is in contact with the second conductive material in the first and the second diode device trenches.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150506&amp;DB=EPODOC&amp;CC=CN&amp;NR=104600067A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150506&amp;DB=EPODOC&amp;CC=CN&amp;NR=104600067A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BRITTA WUTTE</creatorcontrib><title>integrated circuit and method of manufacturing integrated circuit</title><description>An integrated circuit and a method of manufacturing the integrated circuit are disclosed. The integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other. A second conductive material in the first and the second diode device trenches is electrically coupled to a source terminal of the diode component. The first trenches, the first diode device trench and the second diode device trench are disposed in a first main surface of a semiconductor substrate. The integrated circuit further includes a diode gate contact including a connection structure between the first and the second diode device trenches. The connection structure is in contact with the second conductive material in the first and the second diode device trenches.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDMzCtJTS9KLElNUUjOLEouzSxRSMxLUchNLcnIT1HIT1PITcwrTUtMLiktysxLV8BUzsPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4p39DA1MzAwMDMzMHY2JUQMAQ_0yKQ</recordid><startdate>20150506</startdate><enddate>20150506</enddate><creator>BRITTA WUTTE</creator><scope>EVB</scope></search><sort><creationdate>20150506</creationdate><title>integrated circuit and method of manufacturing integrated circuit</title><author>BRITTA WUTTE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN104600067A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BRITTA WUTTE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BRITTA WUTTE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>integrated circuit and method of manufacturing integrated circuit</title><date>2015-05-06</date><risdate>2015</risdate><abstract>An integrated circuit and a method of manufacturing the integrated circuit are disclosed. The integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other. A second conductive material in the first and the second diode device trenches is electrically coupled to a source terminal of the diode component. The first trenches, the first diode device trench and the second diode device trench are disposed in a first main surface of a semiconductor substrate. The integrated circuit further includes a diode gate contact including a connection structure between the first and the second diode device trenches. The connection structure is in contact with the second conductive material in the first and the second diode device trenches.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title integrated circuit and method of manufacturing integrated circuit
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T09%3A28%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BRITTA%20WUTTE&rft.date=2015-05-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN104600067A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true